High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties
作者： M. C. Hugon , F. Delmotte , B. Agius , E. A. Irene
DOI: 10.1116/1.591100
关键词: Dielectric 、 Range (particle radiation) 、 Optoelectronics 、 Materials science 、 Microwave 、 Space charge 、 Electron cyclotron resonance 、 Poole–Frenkel effect 、 Permittivity 、 Silicon nitride
摘要: Dielectric behavior of SiNx films, fabricated by microwave electron cyclotron resonance discharge, has been studied as a function film thickness on the basis current–voltage and capacitance–voltage characteristics. In range (20 nm 20 nm). Finally, spatial profile fixed charges reveals that SiNx/Si interface much greater concentration defects than bulk film.
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