摘要: This letter reports on the finding that holes are more mobile than electrons in chemically vapor deposited (CVD) Si3N4. MIS structures with Si3N4 films as insulating layers used experiments. Holes shown to be electrically injected from silicon into insulator when aluminum‐gate electrode is pulsed negative, and positive, subsequent trapping nitride. The centroid of trapped‐hole distribution, Xh, trapped‐electron Xe, functions voltage pulse amplitude duration measured. ratio Xh/Xe increases its duration, where centroids referenced injection source, exceeds 3 hole distribution spans entire nitride thickness. Data suggest traps perhaps shallower electron traps, hence enhanced conduction
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