ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOS STRUCTURES
作者： V.J. Kapoor , S.B. Bibyk
DOI: 10.1016/B978-0-08-025969-7.50026-9
关键词: Oxide 、 Electron 、 Oxygen impurity 、 Atomic physics 、 Energy distribution 、 Chemistry 、 Electron trapping 、 Penning trap 、 Conduction band 、 Layer (electronics)
摘要: ABSTRACT The energy distribution of electrons trapped during internal photoemission in the Si 3 N 4 layer thick-oxide A1-Si -SiO 2 -Si structure has been investigated. Five well-defined electron trap levels were determined to be located at 2.50, 2.76, 3.03, 3.36 and 3.76 eV below conduction band edge room temperature. data suggests an association charge with oxygen impurity layer.
sci-hub.st 参考文章(6)
H.J. Stein, S.T. Picraux, P.H. Holloway, Analyses for stoichiometry and for Hydrogen and Oxygen in silicon nitride films IEEE Transactions on Electron Devices. ,vol. 25, pp. 1008- 1014 ,(1978) , 10.1109/T-ED.1978.19215
Bob H. Yun, Electron and hole transport in CVD Si3N4films Applied Physics Letters. ,vol. 27, pp. 256- 258 ,(1975) , 10.1063/1.88414
V. J. Kapoor, F. J. Feigl, S. R. Butler, Energy and spatial distribution of an electron trapping center in the MOS insulator Journal of Applied Physics. ,vol. 48, pp. 739- 749 ,(1977) , 10.1063/1.323664
J.H. Thomas, F.J. Feigl, Electron trapping levels in silicon dioxide thermally grown on silicon Journal of Physics and Chemistry of Solids. ,vol. 33, pp. 2197- 2216 ,(1972) , 10.1016/S0022-3697(72)80296-8
Richard Williams, Photoemission of Electrons from Silicon into Silicon Dioxide Physical Review. ,vol. 140, pp. A569- A575 ,(1965) , 10.1103/PHYSREV.140.A569
C. T. Kirk, Valence alternation pair model of charge storage in MNOS memory devices Journal of Applied Physics. ,vol. 50, pp. 4190- 4195 ,(1979) , 10.1063/1.326447