Charge loss in metal-nitride-oxide-semiconductor (MNOS) devices at high temperatures
作者： C.S. Dobbs , W.D. Brown , J.R. Yeargan
DOI: 10.1016/0038-1101(83)90098-9
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摘要: Abstract The charge loss from the nitride layer of MNOS transistors has been studied with emphasis on temperature effects in range 25 to 175°C. trend major interest is increase logarithmic decay rate dominant negative threshold voltage increasing temperature. This result believed due a combination three related mechanisms: (1) thermal excitation (TE) discharge, (2) Poole-Frenkel emission-drift-capture events and (3) conductivity
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