Discharge of MNOS structures at elevated temperatures
作者： Leif Lundkvist , Christer Svensson , Bertil Hansson
DOI: 10.1016/0038-1101(76)90166-0
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摘要: Abstract The discharge behavior of MNOS structures without voltage applied, is investigated at temperatures from 25 to 300°C, for times 10 min about 1 week. observed explained by a theoretical model, including two processes. processes are direct tunneling traps and thermal excitation these traps. It shown that static retention more than yr 85°C attainable. Also, with applied agree the model when small enough.
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L. Lundkvist, I. Lundström, C. Svensson, Discharge of MNOS structures Solid-State Electronics. ,vol. 16, pp. 811- IN1 ,(1973) , 10.1016/0038-1101(73)90178-0
B. H. Yun, Measurements of charge propagation in Si3N4 films Applied Physics Letters. ,vol. 25, pp. 340- 342 ,(1974) , 10.1063/1.1655499
Christer Svensson, Ingemar Lundström, Trap‐assisted charge injection in MNOS structures Journal of Applied Physics. ,vol. 44, pp. 4657- 4663 ,(1973) , 10.1063/1.1662016
K.I. Lundstrom, C.M. Svensson, Properties of MNOS structures IEEE Transactions on Electron Devices. ,vol. 19, pp. 826- 836 ,(1972) , 10.1109/T-ED.1972.17500
Robert M. Hill, Poole-Frenkel conduction in amorphous solids Philosophical Magazine. ,vol. 23, pp. 59- 86 ,(1971) , 10.1080/14786437108216365
M.H. White, J.R. Cricchi, Characterization of thin-oxide MNOS memory transistors IEEE Transactions on Electron Devices. ,vol. 19, pp. 1280- 1288 ,(1972) , 10.1109/T-ED.1972.17591
G.L. Carlstedt, C.M. Svensson, MNOS memory transistors in simple memory arrays IEEE Journal of Solid-state Circuits. ,vol. 7, pp. 382- 388 ,(1972) , 10.1109/JSSC.1972.1052897