Temperature dependence of the relaxation of injected charge at the polycrystalline‐silicon–SiO2interface
作者： T. W. Hickmott
DOI: 10.1063/1.325242
关键词: Condensed matter physics 、 Charge (physics) 、 Capacitor 、 Voltage 、 Electron 、 Polycrystalline silicon 、 Materials science 、 Substrate (electronics) 、 Moment (physics) 、 Relaxation (physics) 、 General Physics and Astronomy
摘要: Electron injection can occur at the polycrystalline‐silicon–SiO2 interface of a polycrystalline‐silicon gate MOS capacitor when relatively low negative voltages are applied to gate. If is improperly annealed, flat‐band shift due injected electrons be several hundred millivolts for 350‐A‐thick oxides. The temperature and voltage dependence relaxation charge has been measured. amount higher its faster temperatures. moment towards substrate silicon‐SiO2 whose absolute magnitudes less than capacitor.
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