Annealing of surface states in polycrystalline‐silicon–gate capacitors
作者： T. W. Hickmott
DOI: 10.1063/1.323662
关键词:
摘要: … polycrystalline-silicon-SiO, interface of phosphorus-doped, polycrystallinesilicon-gate MOS … level in polycrystalline silicon depends on phosphorus concentration in the same way that …
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