Influence of substrate temperature on the properties of fluorinated silicon-nitride thin films deposited by IC-RPECVD

摘要: Fluorinated silicon-nitride films have been prepared from an Ar/SiF4/NH3 gas mixture by inductively coupled remote plasma-enhanced chemical vapor deposition (IC-RPECVD) at different substrate temperatures, ranging 150 to 300°C. All of the resulting deposited were free Si-H bonds, showed high dielectric breakdown fields (≥8 MV cm−1), and had root mean square (rms) surface roughness values below 3 A. The films’ refractive indices contents O F remain constant, but Si/N ratios drop 5 2 N-H bond concentrations decrease in range (1.3–0.9) × 1022 cm−3 as temperature increases. density interface states (Dit) with c-Si was reduced 2.4 1012 8 1011 eV−1 cm−2 temperatures ≥250°C.