Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges

摘要: The relations between the surface reaction probability β of an atom or a radical in reactive gas discharge, its diffusive flux to wall, spatial density profile and temporal decay during postdischarge, are examined. Then, values for H, SiH3, Si2H5 on growing a-Si:H film, CH3 C2H5 a-C:H film derived from densities discharge afterglow by using time-resolved threshold ionization mass spectrometry. For SiH3 a-Si:H, β=0.28±0.03 excellent agreement with previous determinations other experimental approaches, Si2H5, 0.1<β<0.3. H 0.4<β<1 mostly consists recombination as H2, while etching Si SiH4 is only e≈0.03 at 350 K good studies kinetics crystalline silicon. At high dilution H2 sticking probabilities hydride radicals affected atoms hydrogen ions which enhances surfac...