Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films

摘要: Significant progress has been made recently in the fundamental mechanistic and quantitative understanding of radical-surface interactions during plasma deposition processes Si thin films based on a hierarchical atomic-scale simulation approach. Structurally chemically well-defined crystalline amorphous silicon surfaces have characterized detail with respect to their reactivity radicals that are present silane-containing plasmas. A broad class chemical reactions occur growth surface identified analyzed. In addition, model film structures grown substrates generated computationally characterized. Furthermore, more realistic input parameters as an important need improve status predictive capabilities. In spite these recent advances modeling interactions, many questions mechanisms PECVD remain unanswered corresponding reaction database for accurate long-time scale dynamical remains largely incomplete. Future directions this area must follow approaches, establish direct links experimental diagnostics, incorporate additional complexity regarding identities, fluxes, energies impinging surface. Addressing particularly challenging tasks making use ever-increasing capabilities high-performance computing will enable fully processes. Plasma semiconductor is just one case fundamentally interesting, complex process, where multiscale (Maroudas Shankar, 1996; Jensen et al., 1998; Maroudas, 2000) offers powerful tool toward innovative design materials property optimization. Advances development approaches implementation addressing problems electronic thin-film processing reliability presents unique challenge opportunity engineering.