Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous silicon

摘要: Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band 70 MHz with glow discharge technique substrate temperatures between 280 and 50-degrees-C. The structural properties have studied using hydrogen evolution, elastic recoil detection analysis, infrared spectroscopy. films were further characterized by dark photoconductivity photothermal deflection With respect to conventional of 13.56 considerable differences concerning electronic are observed as temperature is decreased from Down 150-degrees-C film change only little total content c(H) degree microstructure that can be directly correlated increase moderately. Below deteriorate usual manner but still does not exceed 21 at.% even It argued influence higher on growth kinetics plays key role this context allowing highly effective dissociation process gas maximum ion energies remaining low levels. concluded deposition processes frequencies important technological implications decrease without losses material quality.