Deposition rate, ion bombardment and gap states density in glow discharge a-Si:H,F films
作者： Roberto Murri , Luigi Schiavulli , Giovanni Bruno , Pio Capezzuto , Gianni Grillo
DOI: 10.1016/0040-6090(89)90248-4
关键词: Band gap 、 Chemistry 、 Thin film 、 Spectroscopy 、 Glow discharge 、 Analytical chemistry 、 Ion 、 Amorphous silicon 、 Ionic bonding 、 Transmittance
摘要: Abstract The optical transmission of hydrogenated and fluorinated amorphous silicon films has been measured by both photothermal deflection spectroscopy classical transmittance. density defects the Urbach energy are assumed as variable parameters. Their trends discussed a function deposition rate effect ionic bombardment.
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