Structural characterization of hydrogenated amorphous GaAs

摘要: Abstract Films of hydrogenated amorphous GaAs have been deposited by reactive sputtering. Substrate temperatures varied in the range 20–200°C, while hydrogen pressure between 2.7 × 10 −2 and 45 Pa. The deposition rate ranged 0.24 0.87 A s −1 film thickness 0.34 0.78 μm. temperature or were allowed to change, different depositions, obtain groups samples with only one variable parameter. TEM THEED measurements made study films. main results are that variations substrate argon affect rate. more complicated situation is found for variation pressure. For content gas phase lower than 10%, mean diameters agglomerates decrease increases. These two effects can be explained role on process, according its major minor plasma phase. With a low morphology tends regular. sputtering controls morphology, addition influences short-range order when relatively low.