Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
作者： Melvin C. Schmidt , Glenn L. Nobinger , Lingqian Qian
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摘要: A method of forming a fluorinated silicon oxide dielectric layer (33) by plasma chemical vapor deposition. The includes the steps creating in chamber (10) and introducing silicon-containing gas, fluorine-containing oxygen an inert gas such that gases are excited react proximate substrate (16) to form on surface (16). so formed has constant which is less than layer.
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