Low temperature reflow dielectric-fluorinated BPSG

摘要: An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on semiconductor device using low pressure chemical vapor deposition process. The F-BPSG exhibits substantially void-free particle-free layer the substrate structures having gaps as narrow 0.10 microns with aspect ratios of 6:1. reactant gases include sources boron phosphorous dopants, oxygen mixture TEOS FTES. Using FTES in CVD process provides above enhanced characteristics. It is preferred invention to perform at temperature about 750-850° C. 1 3 torr provide situ reflow during anneal also under similar conditions same chamber further planarize surface. A wafers BPSG thereon formed by provided.