GePSG core for a planar lightwave circuit
作者： Fan Zhong , Jonathan G. Bornstein
DOI:
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摘要: A method of depositing a core layer for an optical waveguide structure planar lightwave circuit. GePSG circuit is fabricated such that the comprises doped silica glass, wherein dopant includes Ge and P. In from which formed, two separate doping gasses (e.g., GeH 4 PH 3 ) are added during PECVD process to make P glass (GePSG). The ratio configured maintain constant refractive index within across anneal temperature range reduce formation bubbles layer. also birefringence range. thermal can be 900 C. 1200 lower reduces polarization sensitivity arrayed grating devices.
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