Silicon oxynitride film and method for forming same, and semiconductor device
作者： Masaki Fujiwara , Eiji Takahashi , Yasunori Ando
DOI:
关键词:
摘要: An insulating film that does not contain hydrogen or free fluorine and has good properties is provided. A silicon oxynitride includes silicon, nitrogen, oxygen, fluorine, wherein the elemental percentage (N+O+F)/Si of total (N+O+F) nitrogen (N), oxygen (0), (F) to (Si) in a range 1.93 1.48, film, an ranges from 0.34 0.41, 0.10 0.22, 0.14 0.38, 0.17 0.24. The can be formed on substrate by inductive coupling type plasma CVD whereby generated using tetrafluoride gas, gas as material gas.
lens.org 参考文章(28)
Scott Weigel, Eugene Karwacki, Mary Haas, Raymond Vrtis, Mark O'Neill, Curing Dielectric Films Under A Reducing Atmosphere ,(2007)
Nancy L. S. Yamasaki, Lauren R. Wendt, Joseph H. Apfel, Fluorine-containing abrasion-resistant optical thin film devices ,(1997)
Shing Ann Luo, Chin Ta Su, Silicon rich dielectric antireflective coating ,(2008)
Dian Sugiarto, David Cheung, Judy Huang, Process for depositing high deposition rate halogen-doped silicon oxide layer ,(1997)
Brian Keith Peterson, Raymond Nicholas Vrtis, Jean Louise Vincent, Mark Leonard O'neill, Low dielectric constant material and method of processing by CVD ,(2002)
Monique Ben-Dor, Brian Mcmillin, Butch Berney, Huong Nguyen, Alex T. Demos, Paul Kevin Shufflebotham, Inductively coupled plasma cvd ,(1997)
Minoru Komada, Osamu Sakakura, Shinya Sato, Gas barrier film, and display substrate and display using the same ,(2005)
Hiroshi Iwanaga, Gas barrier film, substrate film, and organic electroluminescence device ,(2006)
隆文 大島, 英雄 青木, Takafumi Oshima, 剛 田丸, Hideo Aoki, Takeshi Tamaru, 典子 三浦, 一稔 大森, Kazutoshi Omori, Noriko Miura, Semiconductor integrated circuit device and its manufacturing method ,(2000)