THIN FILM TRANSISTOR MANUFACTURING METHOD

摘要: PROBLEM TO BE SOLVED: To prevent excessive temperature rise of a film which composes thin transistor upon excimer laser beam irradiation in self-alignment process.SOLUTION: A manufacturing method comprises: irradiating beams 16 from substrate 2 side, on structure 14a diffusion prevention 4 is formed the transmits 16, and gate electrode 6 insulation 8 are 4, an oxide semiconductor layer 10 8; both outside regions region corresponding to achieve low resistance make one be source 18 other drain 19. The composed fluorinated silicon nitride (SiN:F) fluorine contained film.