Method for forming film with low dielectric constant on semiconductor substrate
作者： Nobuo Matsuki
DOI:
关键词: Analytical chemistry 、 Plasma reaction 、 Relative permittivity 、 Dielectric 、 Composite material 、 Residence time (fluid dynamics) 、 Materials science
摘要: In a method for forming in reactor film having low relative dielectric constant on semiconductor substrate by plasma reaction, the improvement can be achieved lengthening residence time, Rt, of reaction gas reactor, wherein 100 msec≦Rt. The includes insulation films and mask films.
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