Semiconductor having improved interlevel conductor insulation

摘要: A semiconductor device and method of manufacture employs an improved insulating layer to laterally separate conductive layers or regions. relatively thick is anistropically patterned form electrode having a on its side walls. Subsequently defined regions are separated from the by distance determined thickness layer. In devices requiring multiple level polycrystalline silicon electrodes, shorts between electrodes reduced; in MOS devices, operating parameters due decreased overlap gate over source drain region, contamination during manufacture, more uniform oxide definition along active channel drain.