Process for fabrication of semiconductors utilizing selectively etchable diffusion sources in combination with melt-flow techniques

摘要: A process for fabrication of semiconductor devices comprising the steps depositing over surface a wafer first insulating layer containing impurities which are to be diffused into so as form source and drain regions, second melt-flow is softened or melted at low temperatures, opening contact windows, forming third also contains subjecting heat treatment cause regions by diffusion removing layer. LSI circuits with high source-drain breakdown voltage may fabricated yields.