Method for forming smooth self limiting and pin hole free SiC films on Si

作者： Melvin Berkenblit , See-Ark Chan , Arnold Reisman , Moshe Balog

DOI:

关键词: Tantalum carbide 、 Substrate (electronics) 、 Carbon 、 Silicon carbide 、 Silicon 、 Methane 、 Chemical engineering 、 Metallurgy 、 Layer (electronics) 、 Susceptor 、 Materials science

摘要: The invention provides a method for forming protective silicon carbide (SiC) film on (Si) substrate. permits the formation of Si substrate all surfaces simultaneously. process is highlighted in that to be coated placed susceptor having tantalum and which has high purity ambient. heated at temperature about 1250° C remove native SiO 2 from its surface. system then cooled 900° methane added 30 minutes thereby deposit layer carbon further reacted with form smooth, pin hole free SiC film. layers are also formed by one step reaction directly C.