Rapid thermal cvd apparatus

摘要: In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in reaction chamber. A radiant heat source above and outside The on ring chuck by means of retractable clamp heats from its backside to temperature excess 1000° C. rapidly. includes cylindrical lamps placed radial pattern improve heating uniformity. selective tungsten process raised ambient about 600° while flowing gases. At upper range can be rapidly cycled off uniformity coating.