Effect of the buffer layer on the metal–semiconductor–metal UV photodetector based on Al‐doped and undoped ZnO thin films with different device structures

摘要: ZnO and Al-doped (AZO) thin films were grown on the buffer layer by a chemical spray pyrolysis method. The metal–semiconductor–metal (MSM) UV photodetector based with two device configuration Ag/AZO/ZnO/Ag Ag/ZnO/ZnO/Ag have been studied. AZO technique. effect of physicochemical UV-sensing properties thin-film-based photodetectors analyzed. XRD results suggested that improves crystalline quality films. exhibits maximum photocurrent about 876 µA at 5 V bias 365 nm peak wavelength. linear I–V characteristic reveals good ohmic contacts between metal–semiconductor junctions. AZO-based shows photoresponsivity 340 A/W, which is much higher than ZnO-based layer. photoresponse photoswitching characteristics demonstrate offers new way to fabricate devices buffer-layer-coated substrate.