High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires

摘要: Ultraviolet (UV) photodiodes with fast photoresponse properties were fabricated using vertically aligned aluminum doped ZnO nanowires. Stable p-type have been achieved by doping equimolar concentration of P-N (0.75 at.%) simultaneously in ZnO. The and electrically conducting n-type Al (3 at.%) nanowires grown a simple aqueous chemical growth process. structural, morphological, optical, electrical investigated. For the fabrication UV photodiodes, optimum layers stacked upon ITO substrate. A 250 nm thin NiO was deposited as an electron blocking layer (EBL) between p–n junctions. current density–voltage (J–V) characteristic photodiode measured under dark illumination conditions. Under reverse bias 3 V, device exhibits high photoresponsivity (R) value 15.07 (A/W) light (λ = 365 nm). switching characteristics response recovery time calculated 61 ± 11 455 ± 41 ms, respectively. role formation oxygen interstitial (Oi) defects its impact on improving