SiO2 film thickness metrology by x-ray photoelectron spectroscopy
作者： ZH Lu , JP McCaffrey , B Brar , GD Wilk , RM Wallace
DOI: 10.1063/1.120438
关键词: Analytical chemistry 、 Oxide 、 Attenuation 、 Thermal 、 Transmission electron microscopy 、 Silicon dioxide 、 Rapid thermal processing 、 Metrology 、 Materials science 、 X-ray photoelectron spectroscopy
摘要: … TEM, spectroscopic ellipsometry, and capacitance–voltage (C–V). … Briefly, the oxide film thickness doxy is determined by the Si … variability exists in the effective attenuation length derived …
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