Thermal chemistry of copper acetamidinate atomic layer deposition precursors on silicon oxide surfaces studied by XPS

摘要: The thermal surface chemistry of copper(I)-N,N′-di-sec-butylacetamidinate, [Cu(sBu-amd)]2, a metalorganic complex recently proposed for the chemical-based deposition copper films, has been characterized on SiO2 films under ultrahigh vacuum conditions by x-ray photoelectron spectroscopy (XPS). Initial adsorption at cryogenic temperatures results in oxidation centers with Cu 2p3/2 XPS binding energies close to those seen +2 state, an observation that authors interpret as result additional coordination oxygen atoms from molecular acetamidinate dimer. Either heating 300 K or dosing precursor directly temperature leads loss one its two ligands, presumably via hydrogenation/protonation hydrogen/proton silanol group, following similar reaction defect site. By approximately 500 K 2p3/2, C 1s, and N 1s data suggest remaining ligand is displa...