Influence of Rapid Thermal Annealing on Carrier Dynamics in GaInNAs/GaAs Multiple Quantum Wells
作者： Wei Zhou , Jie Yang , Su-Jing Xia , Xiang Li , Wu Tang
DOI: 10.1088/0256-307X/28/11/117801
关键词: Luminescence 、 Exciton 、 Annealing (metallurgy) 、 Photoluminescence 、 Optoelectronics 、 Spectroscopy 、 Chemical vapor deposition 、 Molecular physics 、 Materials science 、 Spontaneous emission 、 Excitation
摘要: The excitation intensity and time-resolved photoluminescence spectroscopy are used to investigate the impact of annealing on carrier dynamics in Ga0.66In0.34N0.013As0.987/GaAs multiple quantum well structure grown by metalorganic chemical vapor deposition. measurement (PL), performed for as-grown annealed samples at different temperatures, indicates that localized potential has come down slightly after but does not alter fact PL emission low temperature is dominated exciton recombination. In contrast, free recombination magnified post-grown room temperature. Our results show decay times 0.587 0.327ns 10K samples, radiative also shorten significantly all temperatures. Hence improvement luminescence efficiency caused reduction localization enhancement rate. density nonradiative centers demonstrated indirectly annealing.
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