Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure

摘要: Time‐resolved photoluminescence measurements at room temperature of the n=1 heavy hole transition in a GaAs/AlxGa1−xAs multiple quantum well structure reveal single‐exponential decay with τ≊1 ns over wide range excitation densities. Time‐integrated increases as square energy density. These data indicate that observed rate is due to nonradiative recombination. Free carriers, not excitons, govern radiative recombination this sample.