Transient currents in a-Si:H diodes
作者： Herfried Wieczorek
DOI: 10.1016/S0022-3093(05)80364-3
关键词: Trapping 、 Diode 、 Decay curve 、 Analytical chemistry 、 Electron 、 Transient (oscillation) 、 NIP 、 Chemistry 、 Atomic physics 、 Schottky diode 、 Recombination
摘要: The decay of stationary photocurrents on a-Si:H Schottky and nip diodes is investigated. transient current attributed to deep trapping thermal emission electrons. A good fit curves obtained from Shockley-Read statistics. Injection recombination are shown be minor effects under normal conditions.
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