The electrical characterization of surfaces, interfaces and contacts to a-Si:H
作者： R. A. Street , M. J. Thompson , N. M. Johnson
DOI: 10.1080/01418618508242762
关键词: Nanotechnology 、 Layer (electronics) 、 Materials science 、 Silicon nitride 、 Oxide 、 Depletion region 、 Nitride 、 Chemical engineering 、 Amorphous silicon 、 Nanocrystalline silicon 、 Photoconductivity
摘要: Abstract The present work shows how transient photoconductivity can be used to characterize surfaces, interfaces, and contacts hydrogenated amorphous silicon (a-Si:H). At a nitride/a-Si:H interface an electron accumulation layer is found, whereas the native oxide induces depletion layer. much greater when nitride deposited on top of a-Si:H, rather than vice versa. injection properties n+ are also investigated, study made conditions under which these partially or completely depleted, thereby affecting carrier injection.
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