Thin film amorphous and microcrystalline Si for solar cells
作者： J. Yi , R. Wallace , J. Palmer , W.A. Anderson
DOI: 10.1016/0927-0248(94)90203-8
关键词: Silicon 、 Grain boundary 、 Microcrystalline 、 Hydrogen 、 Amorphous solid 、 Thin film 、 Crystallization 、 Amorphous silicon 、 Mineralogy 、 Analytical chemistry 、 Materials science
摘要: Abstract Electrical properties and stability of hydrogenated amorphous silicon (a-Si:H) are dominated by hydrogen movement in the film. Hydrogen Si film structures affected heat treatment. We have investigated influence anneal treatment on a-Si: H films. The was deposited metal substrates. were i/n + /Mo, n/n p/p PIN/n SS. Four types thermal annealing done; nitrogen atmosphere anneal, vaccum rapid (RTA), excimer laser anneal. temperature ranged from 100 to 1200°C. Dark light I–V studies show an improvement short-circuit current open-circuit voltage with a low (200–300°C). Raman scattering spectroscopy examination showed that microcrystallization initiated even at 600°C. It found time only has small effect crystallization but critical effect. micro-crystalline exhibited improved photo response after rf plasma passivation grain boundaries.
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