Crystallized amorphous silicon for low-cost solar cells
作者： J. Yi , R. Wallace , N. Sridhar , Z. Wang , K. Xie
DOI: 10.1016/0379-6787(91)90073-X
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摘要: Abstract Hydrogenated amorphous silicon (a-Si:H), 1–10 μm thick, was deposited onto stainless steel and molybdenum sheets using catholic d.c. glow discharge in a gradient field by plasma-enhanced chemical vapor deposition. The films were subsequently crystallized isothermal heating N2, rapid thermal processing, annealing vacuum (IAV) or after vycor encapsulation (IAE). All techniques led to crystallization as revealed X-ray diffraction. Annealing IAV at 1000 °C for 7 h IAE 700 8 gave the most intense (111) diffraction peaks. Auger electron spectroscopy showed significant diffusion of iron into substrates. Energy recoil detection as-deposited a-Si:H good uniformity both hydrogen.
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