Low temperature crystallization of amorphous silicon using an excimer laser
作者： R. Z. Bachrach , K. Winer , J. B. Boyce , S. E. Ready , R. I. Johnson
DOI: 10.1007/BF02733813
关键词:
摘要: Low temperature processing is a prerequisite for compatible technologies involving combined a-Si and poly-silicon devices or fabricating these on glass substrates. This paper describes excimer-laser-induced crystallization of thin amorphous silicon films deposited by plasma CVD (a-Si:H) LPCVD (a-Si). The intense, pulsed UV produced the laser highly absorbed material, but average with low processing. process produces crystallites whose structure electrical characteristics vary according to starting material scan parameters. crystallized have been principally characterized using x-ray diffraction, TEM, transport measurements. results indicate that nucleate in surface region are randomly oriented. degree near increases as doping level and/or energy density increased. crystallite size power law dependence energy, while conductivity exponentially above threshold unintentionally doped PECVD films. magnitude Hall mobility samples increased two orders over material.
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