Characterized of glow-discharge deposited a-Si:H

摘要: Abstract The study of hydrogenated amorphous silicon, a-Si:H has become an active and large subfield growing interest in noncrystalline semiconductors. This paper reviews recent successes as well difficulties encountered interpreting some fundamental physical properties prepared by glow-discharge deposition. material appears to contain structural compositional heterogeneities which depend on the preparation conditions affect its mechanical electronic properties. These are related concentration bonding configurations hydrogen. Determinations density distribution localized gap states means field effect capacitance measurements discussed evidence for against presence surface states. Optical absorption near edge is described conductivity measurements. latter reveal many interesting puzzles. Staebler Wronski discovered that dark photoconductivity can be changed significantly strong exposure light. Moreover, space charge layers adjacent substrate interface free strongly influence films, especially those having low densities pre-exponential factor increases with activation energy accordance Meyer-Neldel rule regardless whether changes produced doping, light or layers. Attempts made identify causes scatter data film reported various laboratories. Our present understanding recombination processes involved photoluminescence presented. We conclude films superior quality expected when more fully understood.