作者: C. Tablero , A.J. García , J.J. Fernández , P. Palacios , P. Wahnón
DOI: 10.1016/S0927-0256(02)00425-1
关键词: Direct and indirect band gaps 、 Band gap 、 Condensed matter physics 、 Semiconductor 、 Photovoltaic system 、 Chemistry 、 Solar cell 、 Brillouin zone 、 Atom 、 Optoelectronics 、 Characterization (materials science)
摘要: Some alloys containing a transition metal atom in an III–V host semiconductor show intermediate half filled band the middle of usual gap. The presence this allows to use material high efficiency solar cells due its capability absorbing low energy photons. In current work study optoelectronic properties is presented. We mainly focus obtaining matrix elements that contribute direct transitions. also have analyzed some factors on which process depends. found transitions can be for several points inside Brillouin zone.