摘要: Abstract A systematic ab initio study, using the local spin density approximation, of electronic properties Ga x P y M compounds, where is a transition metal substituting or atoms in GaP host semiconductor lattice presented. This study oriented towards early identification intermediate band materials recent interest as new photovoltaic to exceed efficiency single gap and even tandems two solar cells. M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu Zn have been explored metals Sc, Fe 32 31 Cr exhibited desired band.