作者: Mohammadreza Nematollahi , Xiaodong Yang , Lars Martin Sandvik Aas , Zahra Ghadyani , Morten Kildemo
DOI: 10.1016/J.SOLMAT.2015.06.004
关键词: Molecular beam 、 Stacking 、 Pulsed laser deposition 、 Thin film 、 Molecular beam epitaxy 、 Analytical chemistry 、 Crystallinity 、 Grain size 、 Absorption (electromagnetic radiation) 、 Materials science
摘要: Abstract We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The were grown on Si(100) molecular beam epitaxy (MBE) pulsed laser deposition (PLD) equipments. Introducing Cr into resulted related sub-bandgap absorption, but also reduced grain size. absorption increased with increasing content, growth temperature, did not depend method. In contrast, crystallinity depended strongly method, smoother highly textured obtained by PLD. data indicate that stacking faults are present all films.