Correlations of Ba1−xSrxTiO3 Materials and Dielectric Properties
作者： Robert Tsu , Hung-Yu Liu , Wei-Yung Hsu , Scott Summerfelt , Katsuhiro Aoki
DOI: 10.1557/PROC-361-275
关键词: Materials science 、 Thin film 、 Schottky diode 、 Composite material 、 Capacitance 、 Nucleation 、 Dielectric 、 Grain size 、 Microstructure 、 Leakage (electronics)
摘要: Thin film barium strontium titanate, Ba 1−x Sr x TiO 3 (BST), has been deposited on Pt bottom electrodes using metal-organic decomposition (MOD). Optimization of BST electric properties, including capacitance density and leakage current, can be achieved by altering the chemical microstructural attribute films. Dielectric properties are strongly dependent processing temperature, thickness, composition, microstructure, which closely correlated with each other. Nucleation temperatures range from 580°C – 650°C depending thicknesses. The composition giving highest dielectric constant is explained in terms microstructure; increases increasing grain size for films this study. Capacitance 50 fF/μ m 2 current at 1.6 V optimizing materials properties. In addition, conduction through Pt/BST/Pt capacitor shown to consist polarization resulting Debye relaxation true attributed Schottky electron emission.
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