Calculation of semiconductor intrinsic properties using a nonparabolic three‐band model
作者： V. Ariel , S. E. Schacham , G. Bahir
DOI: 10.1063/1.359341
关键词: Electron 、 Fermi–Dirac statistics 、 Chemistry 、 Band gap 、 Fermi level 、 Electronic band structure 、 Semiconductor 、 Solid-state physics 、 Condensed matter physics 、 Numerical integration
摘要: The intrinsic carrier concentration and the Fermi level are calculated using an approximation of three‐band k⋅p model. approach is suitable for temperatures from 0 to 400 K includes contribution electrons in lowest conduction band, heavy holes, light holes. An nonparabolic Fermi–Dirac integral used calculation concentrations. resulting expressions simple depend explicitly on temperature, semiconductor band gap, effective masses, nonparabolicity factors. Consequently, present seems properties any material which model applicable. compared with a numerical integration Hg1−xCdxTe (0.17
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