作者: J. Aizenberg , J. A. Rogers , K. E. Paul , G. M. Whitesides
DOI: 10.1063/1.120502
关键词: Optoelectronics 、 Irradiance 、 Distribution (mathematics) 、 Photoresist 、 Fabrication 、 Materials science 、 Intensity (heat transfer) 、 Optics 、 Diffraction 、 Near and far field 、 Contrast (vision)
摘要: This letter describes the use of a sensitive photoresist for direct imaging optical intensity profiles in near-field photolithographic experiments. A comparison between experimental patterns exposed, developed and calculated shows that this procedure provides reliable semiquantitative image irradiance distribution near field; experiment theory correlate adequately. potential superficial diffraction contrast recorded as basis new method fabrication nanostructures is discussed.