Optical switch based on vanadium dioxide thin films
作者： Sihai Chen , Hong Ma , Xinjian Yi , Hongcheng Wang , Xiong Tao
DOI: 10.1016/J.INFRARED.2003.11.005
关键词: Thin film 、 Materials science 、 Silicon 、 Insertion loss 、 Extinction ratio 、 Optics 、 Optical communication 、 Optical switch 、 Ion beam sputtering 、 Vanadium dioxide
摘要: Abstract In this letter, novel optical switches based on VO2 thin film substrates of silicon (1 0 0) has been fabricated. The vanadium dioxide films were deposited by reactive ion beam sputtering followed a post-annealing. Testing shows the insertion loss is 1–2 dB, and extinction ratio up to 26 dB. speed as fast 3 ms.
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