Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
作者： P. Rudolph
关键词: Crystallography 、 Semiconductor 、 Chemical physics 、 Cadmium telluride photovoltaics 、 Dislocation 、 Phase (matter) 、 Crystallographic defect 、 Impurity 、 Stoichiometry 、 Precipitation (chemistry) 、 Materials science
摘要: An overview on the defect knowledge in IV-VI (PbTe), II-VI (CdTe) and III-V (GaAs, InP) semiconductor compound crystals dependence non-stoichiometric growth conditions from melt is given. The treatment starts with today's informations about phase relations, i.e. shape of existence regions versus stoichiometry. Non-stoichiometry related phenomena are specified. After that selected intrinsic point defects their influence impurity incorporation as function deviation stoichiometry discussed. interaction processes between native dislocation formation touched. Finally, serious mechanisms precipitation inclusion shown. Possible measures minimization mentioned.
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