Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO 2 Resistive Random Access Memory

摘要: In this paper we report about the scaling perspective of ultra-scaled HfO 2 Resistive Random Access Memory devices. Due to filamentary conduction, scalability these devices is considered be ultimately limited by size conductive filament. However, even though precise and shape filament not fully elucidated, it widely accepted that its mainly controlled current compliance. turn, latter sets operating level cell. The reduction nevertheless accompanied performance instabilities, which are main reliability threat for low-current operations. resulting tradeoff raises concerns potential RRAM work, combine device-level measurements, Conductive Atomic-Force Microscopy (C-AFM), physics-based simulations elucidate reason instabilities. Results clarify perspectives ultra-low cell (< 10×10 nm2) RRAMs their reliability.