Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level
作者： Ş. Altındal , T. Tunç , H. Tecimer , İ. Yücedağ
DOI: 10.1016/J.MSSP.2014.05.007
关键词: Materials science 、 Doping 、 Analytical chemistry 、 Saturation current 、 Depletion region 、 Recombination 、 Equivalent series resistance 、 Surface states 、 Voltage 、 Diode
摘要: Abstract Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures were investigated in dark under 250 W illumination level using forward reverse bias current–voltage (I–V) measurements at room temperature. Reverse saturation current (Io), ideality factor (n), zero-bias-barrier height (ΦBo) values found as 1.18×10−8 A, 2.492 0.705 eV (low region); 9.10×10−7 A, 7.515 0.597 eV (high 1.05×10−6 A, 6.053 0.593 eV level. The semi-logarithmic I–V plot was described a two-diode model, indicating two current-transport mechanisms acting the diode. first mechanism can be attributed to recombination carriers between Zn) doped PVA, second one depletion region. In addition, energy density distribution profile surface states (Nss) extracted from forward-bias data by taking into account voltage dependent effective barrier (Φe), n(V), series resistance (Rs).
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