Characterization of amorphous carbon rich Si1−xCx thin films obtained using high energy hydrocarbon ion beams on Si
作者： H Huck , E.B Halac , C Oviedo , G Zampieri , R.G Pregliasco
DOI: 10.1016/S0169-4332(98)00602-3
关键词: Carbon film 、 Analytical chemistry 、 X-ray photoelectron spectroscopy 、 Thin film 、 Amorphous solid 、 Ion beam deposition 、 Amorphous carbon 、 Raman spectroscopy 、 Thermal stability 、 Chemistry
摘要: Abstract Amorphous Si1−xCx films, with x ranging from 0.54 to 0.71 and low hydrogen content (less than 5%) were grown by high-energy hydrocarbon ion beam deposition on silicon wafers. The resulting films studied using XPS, AES, EELS Raman spectroscopies. As increases there is a higher number of C atoms in sp2 sites, showing that for high carbon concentrations the bonding character function Si/C relative films. Films annealed at different temperatures XPS spectroscopies; no evidence complete graphitization up 900°C. It concluded presence Si their thermal stability.
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