Characteristics of carbon films prepared by plasma-based ion implantation
作者： J.X. Liao , W.M. Liu , T. Xu , Q.J. Xue
DOI: 10.1016/J.CARBON.2003.11.013
关键词:
摘要: Abstract A series of carbon films have been prepared by plasma-based ion implantation (PBII) with C on pure Al and Si. Emphasis has placed the effect implanting voltage characteristics these films. The structures were analyzed X-ray photoelectron spectroscopy (XPS) Raman spectroscopy. morphologies observed atomic force microscope (AFM). Surface hardness electrical resistivity also measured. results indicate that are strongly dependent voltage. An threshold value ranging from 3 to 5 kV starts form a C-substrate transition layer owing C+ ions implanted into substrate. exhibits gradual change in composition structure effectively connects film Also, an 10 diamond-like (DLC) increasing causes resultant DLC be smoother more compact. Moreover, spectrum, chemical state C1s, surface all prove optimum approximately 30 corresponding lowest ratio sp2/sp3.
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