Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films
作者： Keng-Fu Liu , Li-Ju Chen , Nyan-Hua Tai , I-Nan Lin
DOI: 10.1016/J.DIAMOND.2008.09.017
关键词: Thin film 、 Chemical engineering 、 Diamond 、 Layer (electronics) 、 Current density 、 Mineralogy 、 Plasma-enhanced chemical vapor deposition 、 Nucleation 、 Materials science 、 Synthetic diamond 、 Field electron emission 、 Mechanical engineering 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 General Physics and Astronomy 、 Electronic, Optical and Magnetic Materials 、 General chemistry
摘要: Abstract Mo-coating on Si-substrate is observed to significantly improve the formation kinetics of diamond nuclei and growth behavior ultra-nanocrystalline (UNCD) films. Contrary phenomenon that are only scarcely formed bare Si-substrates leading incomplete coverage UNCD grains, (and grains) found cover whole surface Mo-coated Si-substrates. While markedly enhances nucleation diamonds, it degrades electron field emission (EFE) properties It attributed conversion conducting Mo-metallic film into a resistive Mo 2 C layer during microwave plasma CVD process. A sufficiently thick Mo-layer enhance while minimizing deleterious effect their EFE with an improved turn-on-field 13 V/μm current density 55 μA/cm at applied 30 V/μm.
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