Towards understanding the emission efficiency of nitride quantum wells
作者： A. Hangleiter , D. Fuhrmann , M. Grewe , F. Hitzel , G. Klewer
关键词: Quantum efficiency 、 Radiative transfer 、 Emission efficiency 、 Nitride 、 Light emission 、 Quantum yield 、 Molecular physics 、 Quantum well 、 Exciton 、 Condensed matter physics 、 Chemistry
摘要: The high quantum efficiency of light emission from GaInN/GaN wells despite the typically large defect density still lacks a quantitative explanation. From detailed analysis highly efficient samples we find that reduction radiative probability due to free exciton dissociation is dominant mechanism limiting efficiency. Random localization shown be only minor contribution.
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