Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures
作者： D. Fuhrmann , T. Retzlaff , U. Rossow , H. Bremers , A. Hangleiter
DOI: 10.1063/1.2202109
关键词: Gan algan 、 Photoluminescence 、 Condensed matter physics 、 Semiconductor quantum wells 、 Quantum well 、 Materials science 、 Quantum efficiency 、 Optoelectronics 、 Excitation
摘要: We have achieved dramatic improvement of the internal quantum efficiency (IQE) for ultraviolet-emitting GaN∕AlGaN quantum-well (QW) structures. Despite a defect density few 109cm−2 and use an In-free QW we achieve best values IQE at room temperature 26%. Under strong nonresonant excitation, even increases to 38%. observe weak dependence on excitation power our This indicates that similar mechanisms as GaInN-based light emitters are present.
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